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| 2SK1836, 2SK1837 Silicon N Channel MOS FET Application TO-3PL High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter 2 1 1 Table 1 Ordering Information 3 Type No 2SK1836 2SK1837 VDSS 450V 500V 3 1. Gate 2. Drain (Flange) 3. Source 2 ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage K1836 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- K1837 Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------------ 500 30 50 200 50 250 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1836, 2SK1837 Table 3 Electrical Characteristics (Ta = 25C) Item Symbol Min 450 500 30 Typ -- -- -- Max -- -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- Drain to source K1836 V(BR)DSS breakdown voltage ---------- K1837 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current K1836 V(BR)GSS IGSS IDSS -------------------- --------------------------------------------------------------------------------------------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- ---------- K1837 Gate to source cutoff voltage VGS(off) 2.0 -- -- 22 -- 0.08 0.085 35 3.0 0.10 0.11 -- S ID = 25 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 25 A VGS = 10 V RL = 1.2 V -------------------- VDS = 400 V, VGS= 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Static drain to source K1836 RDS(on) on state resistance -------- K1837 Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr ID = 25 A VGS= 10 V * ---------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 8150 2100 180 80 250 550 220 1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 50 A, VGS = 0 IF = 50 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 620 -- ns -------------------------------------------------------------------------------------- 2SK1836, 2SK1837 Power vs. Temperature Derating 400 Maximum Safe Operation Area 1000 300 Operation in this area is limited by R DS (on) 10 10 0m s s Pch (W) 300 100 Drain Current I D (A) 30 DC Channel Dissipation PW Op er ati = 1m 200 10 3 1 0.3 Ta = 25C 10 s ms on (1 (T sh c= ot) 100 25 C ) K1836 K1837 0 50 100 Case Temperature 150 Tc (C) 200 0.1 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 100 100 8V 10 V 80 Drain Current I D (A) 5.5 V 60 Drain Current I D (A) Pulse Test 6V 80 Typical Transfer Characteristics V DS = 20 V Pulse Test 60 40 5V 40 20 4.5 V V GS = 4 V 20 Tc = 75C 25C - 25C 4 6 8 10 0 4 8 12 16 20 0 2 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 2SK1836, 2SK1837 Drain-Source Saturation Voltage vs. Gate-Source Voltage 5 50 A Drain to Source Saturation Voltage VDS (on) (V) 4 Pulse Test Static Drain-Source on State Resistance R DS (on) ( ) 0.5 1 Static Drain-Source on State Resistance vs. Drain Current Pulse Test 3 0.2 0.1 0.05 V GS = 10, 15 V 2 20 A 1 I D = 10 A 0.02 0.01 0 4 8 12 16 20 5 10 20 50 100 200 500 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain-Source on State Resistance vs. Temperature 0.5 Pulse Test VGS = 10 V Static Drain-Source on State Resistance R DS (on) ( ) 0.4 50 Forward Transfer Admittance vs. Drain Current Tc = - 25C Forward Transfer Admittance |y fs | (S) 20 25C 75C 10 5 0.3 0.2 I D = 50 A 20 A 2 1 0.1 10 A V DS = 20 V Pulse Test 1 2 5 10 20 50 0 -40 0 40 80 120 160 0.5 0.5 Case Temperature Tc (C) Drain Current I D (A) 2SK1836, 2SK1837 Body-Drain Diode Reverse Recovery Time 1000 500 Capacitance C (pF) 10000 Typical Capacitance vs. Drain-Source Voltage Ciss Reverse Recovery Time trr (ns) 200 100 50 di / dt = 100 A / s V GS = 0, Ta = 25C 1000 Coss 100 VGS = 0 f = 1 MHz 10 Crss 20 10 0.5 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics 500 V DD = 100 V Drain to Source Voltage V DS (V) 400 250 V 400 V 300 VDS 200 ID = 50 A 8 V GS 12 16 Gate to Source Voltage V GS (V) 2000 Switching Time t (ns) 1000 20 5000 Switching Characteristics . V GS = 10 V,V DD = 30 V . PW = 2 s, duty 1 % td (off) 500 tf 200 tr 100 td (on) 100 V DD = 400 V 250 V 100 V 4 0 80 160 240 320 0 400 50 0.5 1 2 5 10 20 50 Gate Charge Q g (nc) Drain Current I D (A) 2SK1836, 2SK1837 Reverse Drain Current vs. Source to Drain Voltage 100 Pulse Test Reverse Drain Current I DR (A) 80 60 40 20 V GS = 10 V 0, - 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) D=1 0.5 0.3 1 Tc = 25C 0.2 0.1 0.05 0.02 0.1 0.03 0.01 1 shot Pulse 0.01 10 100 10 m 100 m ch - c(t) = s(t) . ch - c ch - c = 0.5C / W, Tc = 25C PW D= T P DM T 1m 1 PW 10 Pulse Width PW (S) 2SK1836, 2SK1837 Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin 10 V 50 Vin Vout 10 % 10 % 10 % . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf |
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